Room temperature continuous wave InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm

Author

Lott, James A. ; Ledentsov, N.N. ; Ustinov, V.M. ; Maleev, N.A. ; Zhukov, A.E. ; Kovsh, A.R. ; Maximov, M.V. ; Volovik, B.V. ; Alferov, Zh.I. ; Bimberg, D.

Author_Institution

Dept. of Electr. & Comput. Eng., Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

304

Abstract

Vertical cavity surface emitting lasers based on InAs-InGaAs quantum dots emitting at 1.3 μm and grown on GaAs substrates were studied. Preliminary results suggest that the performance of GaAs-based QD VCSELs matches and may eventually exceed that of rival 1.3 μm quantum well VCSEL designs

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 1.3 mum; GaAs substrates; GaAs-based QD VCSELs; InAs-InGaAs; InAs-InGaAs quantum dot VCSELs; InAs-InGaAs quantum dot lasers; continuous wave lasers; room temperature; vertical cavity surface emitting lasers; Apertures; Distributed Bragg reflectors; Gallium arsenide; Indium gallium arsenide; Microcavities; Optical computing; Quantum dots; Temperature; US Department of Transportation; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890799

Filename

890799