Title :
All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion
Author :
Eyres, L.A. ; Tourreau, P.J. ; Pinguet, T.J. ; Ebert, C.B. ; Harris, J.S. ; Fejer, M.M. ; Gerard, B. ; Becouarn, K. ; Lallier, E.
Author_Institution :
Center for Nonlinear Opt. Mater., Stanford Univ., CA, USA
Abstract :
We have demonstrated all-epitaxial growth of orientation patterned GaAs films having suitable aperture and domain period for bulk-focused frequency conversion from the near-IR to mid-IR. The films have good optical properties and enable quasi-phasematched frequency conversion with near theoretical efficiency. Investigation continues into the growth of thicker films, shorter domain periods for use with shorter wavelength pump lasers, and demonstration of mid-IR frequency conversion devices
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; optical films; optical frequency conversion; optical phase matching; GaAs; all-epitaxial growth; all-epitaxial orientation-patterned GaAs; aperture and domain period; bulk-focused frequency conversion; domain periods; mid-IR; mid-IR frequency conversion devices; near theoretical efficiency; near-IR; nonlinear optical frequency conversion; optical properties; orientation patterned GaAs films; quasi-phasematched frequency conversion; wavelength pump lasers; Apertures; Frequency conversion; Gallium arsenide; Laser excitation; Laser theory; Nonlinear optical devices; Nonlinear optics; Optical films; Optical pumping; Pump lasers;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890803
