DocumentCode :
2717660
Title :
An X-Band CMOS Multifunction-Chip FMCW Radar
Author :
Tzuang, Ching-Kuang C. ; Chang, Chi-Ho ; Wu, Hsien-Shun ; Wang, Sen ; Lee, Si-Xian ; Chen, Chih-Chia ; Hsu, Chi-Yang ; Tsai, Kun-Hung ; Chen, Johnsea
Author_Institution :
Graduate Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei
fYear :
2006
fDate :
11-16 June 2006
Firstpage :
2011
Lastpage :
2014
Abstract :
A fully integrated, miniaturized, low-power frequency-modulated continuous wave (FMCW) multifunction chip realized by typical 1P6M 0.18 mum deep n-well CMOS technology is presented for the first time. The multifunction chip consists of VCO, buffer amplifier, 3-dB power divider, isolators, driving amplifiers, mixer, low-noise amplifier, attenuator, etc., necessary for carrying out the X-band RF signal processing of the FMCW signals interfaced to dual antenna arrays. The chip real estate measures 2.4 mm by 1.3 mm. The entire FMCW chip design is based on the synthetic complementary-conducting-strips (CCS) quasi-TEM transmission line. The transmitter output is 3.5 dBm for frequencies between 9.5-11.0 GHz and maximum tuning bandwidth is nearly 150 MHz. The receiver channel has conversion gain of 6 dB. The calculated range is in good agreement with the measurement data
Keywords :
CMOS integrated circuits; CW radar; FM radar; low-power electronics; microwave integrated circuits; radar signal processing; 0.18 micron; 1.3 mm; 2.4 mm; 6 dB; 9.5 to 11.0 GHz; CMOS technology; FMCW signals; X-band RF signal processing; dual antenna arrays; frequency-modulated continuous wave chip; low-power chip; multifunction chip; quasi-TEM transmission line; synthetic complementary conducting strips; CMOS technology; Frequency; Isolation technology; Low-noise amplifiers; Power dividers; Radar; Radiofrequency amplifiers; Semiconductor device measurement; Transmission line measurements; Voltage-controlled oscillators; complementary conducting surface; frequency-modulated continuous wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
ISSN :
0149-645X
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2006.249848
Filename :
4015356
Link To Document :
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