Title :
Fault Detection for IGBT Using Adaptive Thresholds During the Turn-on Transient
Author :
RodriÌguez-Blanco, Marco Antonio ; VaÌzquez-PeÌrez, Amsi ; HernaÌndez-GonzaÌlez, Leobardo ; Golikov, Victor ; Aguayo-Alquicira, JesuÌs ; May-Alarcon, Manuel
Author_Institution :
Dept. of Electron. Eng., Autonomous Univ. of Carmen, Ciudad del Carmen, Mexico
Abstract :
This paper presents the analysis and design of an electronic failure detection system applied to the insulated gate bipolar transistor (IGBT), this proposal is based on the direct measurement of behavior of the gate signal during the turn-on transient. The failures by short-circuit and open-circuit devices only are considered in this paper. To achieve early detection, the IGBT gate signal behavior during turn-on transient is used and to increase the effectiveness of the detection and to tolerate the variations of input to system, adaptable thresholds have been added to the analog electronics circuit implemented. The experimental tests are presented in order to validate the proposed fault-detection technique.
Keywords :
fault diagnosis; insulated gate bipolar transistors; short-circuit currents; IGBT gate signal behavior; adaptive thresholds; analog electronics circuit; electronic failure detection system; fault detection; gate signal measurement; insulated gate bipolar transistor; open-circuit devices; short-circuit devices; turn-on transient; Capacitance; Circuit faults; Fault detection; Insulated gate bipolar transistors; Inverters; Logic gates; Transient analysis; Adaptable Signal Detection; Adaptable signal detection; Drives; Failure analysis; Fault Diagnosis; Insulated Gate Bipolar Transistors; Inverter; drives; electronics circuit; failure analysis; fault diagnosis; insulated-gate bipolar transistors (IGBTs); inverter; threshold and Fault detection; threshold and fault detection;
Journal_Title :
Industrial Electronics, IEEE Transactions on
DOI :
10.1109/TIE.2014.2364154
