DC-RF Performance Improvement for Strained 0.13 μm MOSFETs mounted on a Flexible Plastic Substrate

Author

Kao, H.L. ; Chin, Albert ; Liao, C.C. ; Tseng, Y.Y. ; McAlister, S.P. ; Chi, C.C.

Author_Institution

Dept. of Electron. Eng., National Chiao-Tung Univ., Hsinchu

fYear

2006

fDate

11-16 June 2006

Firstpage

2043

Lastpage

2046

Abstract

By applying 0.7% tensile strain to the flexible die of a 0.13 mum thin-body (40 mum) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current I_d,sat was 14.3% higher, and f_T increased from 103 to 118 GHz with NF _min decreasing from 0.89 to 0.75 dB at 10 GHz. These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost

Keywords

MOSFET; semiconductor device packaging; stress effects; surface mount technology; 0.13 micron; DC-RF performance improvement; RF noise; RF passive devices; flexible plastic substrate; insulating plastic substrate; strained MOSFET; Capacitive sensors; Costs; MOS devices; MOSFETs; Microstrip; Noise figure; Noise measurement; Plastic insulation; Radio frequency; Tensile strain; MOSFET; RF Noise; associated gain; plastic;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249856

Filename

4015364