Contributions to development of power SiC devices

Author

Avram, Marioara ; Brezeanu, Gheorghe ; Iliescu, Ciprian ; Neagoe, Otilia

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania

Volume

2

fYear

2004

fDate

4-6 Oct. 2004

Firstpage

303

Abstract

A comparative study on high voltage MOSFET and IGBT devices (internal cell, electrical characteristics) demonstrate the similarity of both devices. This work presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT. The IGBT can block voltages up to 1800 V (for V_GS=-80 V), with a specific on-resistance as low as 13 mW/cm², 100-200 lower than similar IGBT on Si. Comparing the circuit performance to that of a SiC IGBT, it turns out is almost twice faster than the MOSFET.

Keywords

current density; electric resistance; electrical conductivity; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; -80 V; 2 kV; SiC; SiC IGBT; SiC MOSFET; current density; dynamic properties; electrical conductivity; electrical properties; high voltage IGBT device; high voltage MOSFET device; insulated gate bipolar transistors; internal cell; metal-oxide-semiconductor field effect transistor; power SiC devices; specific on-resistance; static properties; Conductivity; Electron emission; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power dissipation; Semiconductor materials; Silicon carbide; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International

Print_ISBN

0-7803-8499-7

Type

conf

DOI

10.1109/SMICND.2004.1403000

Filename

1403000