Title :
Inter-trap tunneling in SiO2 films of hydrogen implanted n-Si/SiO2 structures
Author :
Simeonov, S. ; Gushterov, A. ; Szekeres, A. ; Kafedjiiska, E.
Author_Institution :
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
Abstract :
Capacitance-voltage measurements at 77 and 300 K have shown that implantation of hydrogen ions with energy of 11 keV into the n-Si/SiO2 structure generates defects in the 120 nm thick SiO2 layer and at the Si/SiO2 interface. In the accumulation mode tunnelling type conduction through the oxide is observed. It is shown that inter-trap tunnelling is responsible for this current.
Keywords :
MIS capacitors; electron traps; elemental semiconductors; hydrogen; ion implantation; semiconductor-insulator boundaries; silicon; silicon compounds; tunnelling; 120 nm; 300 K; 77 K; Si-SiO2; SiO2 films; accumulation mode tunnelling type conduction; capacitance-voltage measurements; defects; hydrogen implanted n-Si-SiO2 structures; inter-trap tunneling; Capacitance; Capacitance-voltage characteristics; Electron traps; Hydrogen; MOS capacitors; Physics; Silicon; Solid state circuits; Tunneling; Voltage;
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
DOI :
10.1109/SMICND.2004.1403010
