Carrier lifetime and radiative recombination in quantum dot LEDs

Author

Li, H. ; Newell, T.C. ; Liu, G.T. ; Stintz, A. ; Malloy, K. ; Lester, L.F.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

376

Abstract

We have measured the differential carrier lifetime as a function of current density for QD LED samples and used this data to calculate the functional relationship between the carrier lifetime, carrier density and radiative efficiency. The results indicate that carrier filling on the different dot energy levels has a strong influence on the radiative behavior of the devices and that the radiative rate coefficient, B, for different QD levels can vary considerably

Keywords

carrier density; carrier lifetime; light emitting diodes; radiative lifetimes; semiconductor quantum dots; carrier density; carrier filling; current density; differential carrier lifetime; dot energy levels; quantum dot LEDs; radiative efficiency; radiative rate coefficient; radiative recombination; Charge carrier density; Charge carrier lifetime; Current density; Current measurement; Density measurement; Energy states; Filling; Light emitting diodes; Quantum dots; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890835

Filename

890835