Extraction of parameters of high permittivity ultrathin (0.5-2.0 nm) gate dielectrics

A new capacitance technique is proposed for the extraction of important parameters of MOS nano-transistors with high permittivity ultrathin (equivalent oxide thickness (EOT)=0.5 to 2.0 nm) gate dielectrics. These parameters include the gate dielectric capacitance, the flat-band voltage, the surface potential versus bias relation, the dielectric potential, the quantization indices for the accumulation and the strong inversion layer, the doping density profile right up to the interface, and the flat-band interface charge density.