Title :
Surface characteristics of In and Zn oxides by atomic force microscopy
Author :
Suchea, M. ; Kiriakidis, G.
Author_Institution :
Microelectron. Dept., Crete Univ., Greece
Abstract :
Indium and zinc oxide (InOx, ZnO) thin films with different thickness were prepared by dc magnetron sputtering onto silicon substrates. Structural investigations carried out by atomic force microscopy (AFM) shown a strong correlation between surface topology and growth parameters. Grain radius (GR) and roughness (RMS) were found to be dependent on film thickness and deposition parameters. The results revealed a linear variation of both GR and RMS as a function of thickness, pressure, substrate temperature, and growth rate. All measurements were made at room temperature using AFM-tapping mode.
Keywords :
II-VI semiconductors; atomic force microscopy; grain size; indium compounds; metallic thin films; rough surfaces; semiconductor growth; semiconductor materials; semiconductor thin films; surface morphology; surface roughness; wide band gap semiconductors; zinc compounds; 293 to 298 K; AFM-tapping mode; InOx; InOx thin films; Si; ZnO; ZnO thin films; atomic force microscopy; dc magnetron sputtering; deposition parameters; film thickness; grain radius; growth rate; indium oxide thin films; room temperature; roughness; silicon substrates; substrate temperature; surface characteristics; surface properties; surface topology; zinc oxide thin films; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Indium; Semiconductor thin films; Silicon; Sputtering; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
DOI :
10.1109/SMICND.2004.1403012
