Analysis of mechanism for transparent emitter

Author

Cailin, Wang ; Yong, Gao

Author_Institution

Dept. of Electron. Eng., Xi´´an Univ. of Technol., China

Volume

2

fYear

2004

fDate

4-6 Oct. 2004

Firstpage

359

Abstract

The current transport of transparent emitter is analysed in detail theoretically and the expression of the electron current density at the transparent anode is deduced. In addition, the switching characteristic of the gate commutated thyristor (GCT) device with transparent anode structure is simulated by using MEDICI simulator, and compared with the gate turn-off thyristor (GTO) device with conventional anode structure. The result shows that the theoretical analysis for the transparent emitter is reasonable. Based on theoretical analysis, the mechanism of the transparent emitter is revealed. The result provides an important design basis for the devices with the transparent emitter.

Keywords

current density; electron density; power semiconductor devices; semiconductor device models; thyristors; MEDICI simulator; conventional anode structure; current transport; electron current density; gate commutated thyristor device; gate turn-off thyristor device; switching characteristics; transparent anode; transparent emitter; Anodes; Buffer layers; Electron emission; Insulated gate bipolar transistors; Power semiconductor devices; Power semiconductor switches; Spontaneous emission; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International

Print_ISBN

0-7803-8499-7

Type

conf

DOI

10.1109/SMICND.2004.1403017

Filename

1403017