DocumentCode
2718267
Title
A modeling and circuit reduction methodology for circuit simulation of DRAM circuits
Author
Kao, William H. ; Gao, Xiao C. ; Hamazaki, Ryaji ; Kikuchi, Hidekazu
Author_Institution
Cadence Design Syst. Inc., San Jose, CA, USA
fYear
1995
fDate
7-8 Aug 1995
Firstpage
15
Lastpage
20
Abstract
As DRAM circuit densities increase and feature sizes decrease, circuit simulation of these circuits is becoming increasingly more critical and challenging in order to handle the large circuit capacity (millions of transistors), together with the accuracy required to take into account submicron effects. This paper presents a modeling and circuit reduction methodology and a DRAM modeling tool that lets the user configure the model architecture, parameterize and generate reduced macromodels, select and switch between different-level models, link the different models, and define circuit stimulus signals for the circuit simulation of the entire DRAM design
Keywords
DRAM chips; circuit analysis computing; DRAM circuits; DRAM modeling tool; accuracy; circuit capacity; circuit densities; circuit reduction methodology; circuit simulation; circuit stimulus signals; feature sizes; macromodel generation; model levels; model linking; reduced macromodel parameterization; submicron effects; user-configurable model architecture; Circuit simulation; Decoding; Driver circuits; Power supplies; Random access memory; Rivers; Signal generators; Switches; Switching circuits; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Technology, Design and Testing, 1995., Records of the 1995 IEEE International Workshop on
Conference_Location
San Jose, CA
Print_ISBN
0-8186-7102-5
Type
conf
DOI
10.1109/MTDT.1995.518076
Filename
518076
Link To Document