• DocumentCode
    2718267
  • Title

    A modeling and circuit reduction methodology for circuit simulation of DRAM circuits

  • Author

    Kao, William H. ; Gao, Xiao C. ; Hamazaki, Ryaji ; Kikuchi, Hidekazu

  • Author_Institution
    Cadence Design Syst. Inc., San Jose, CA, USA
  • fYear
    1995
  • fDate
    7-8 Aug 1995
  • Firstpage
    15
  • Lastpage
    20
  • Abstract
    As DRAM circuit densities increase and feature sizes decrease, circuit simulation of these circuits is becoming increasingly more critical and challenging in order to handle the large circuit capacity (millions of transistors), together with the accuracy required to take into account submicron effects. This paper presents a modeling and circuit reduction methodology and a DRAM modeling tool that lets the user configure the model architecture, parameterize and generate reduced macromodels, select and switch between different-level models, link the different models, and define circuit stimulus signals for the circuit simulation of the entire DRAM design
  • Keywords
    DRAM chips; circuit analysis computing; DRAM circuits; DRAM modeling tool; accuracy; circuit capacity; circuit densities; circuit reduction methodology; circuit simulation; circuit stimulus signals; feature sizes; macromodel generation; model levels; model linking; reduced macromodel parameterization; submicron effects; user-configurable model architecture; Circuit simulation; Decoding; Driver circuits; Power supplies; Random access memory; Rivers; Signal generators; Switches; Switching circuits; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Technology, Design and Testing, 1995., Records of the 1995 IEEE International Workshop on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-8186-7102-5
  • Type

    conf

  • DOI
    10.1109/MTDT.1995.518076
  • Filename
    518076