DocumentCode :
2718267
Title :
A modeling and circuit reduction methodology for circuit simulation of DRAM circuits
Author :
Kao, William H. ; Gao, Xiao C. ; Hamazaki, Ryaji ; Kikuchi, Hidekazu
Author_Institution :
Cadence Design Syst. Inc., San Jose, CA, USA
fYear :
1995
fDate :
7-8 Aug 1995
Firstpage :
15
Lastpage :
20
Abstract :
As DRAM circuit densities increase and feature sizes decrease, circuit simulation of these circuits is becoming increasingly more critical and challenging in order to handle the large circuit capacity (millions of transistors), together with the accuracy required to take into account submicron effects. This paper presents a modeling and circuit reduction methodology and a DRAM modeling tool that lets the user configure the model architecture, parameterize and generate reduced macromodels, select and switch between different-level models, link the different models, and define circuit stimulus signals for the circuit simulation of the entire DRAM design
Keywords :
DRAM chips; circuit analysis computing; DRAM circuits; DRAM modeling tool; accuracy; circuit capacity; circuit densities; circuit reduction methodology; circuit simulation; circuit stimulus signals; feature sizes; macromodel generation; model levels; model linking; reduced macromodel parameterization; submicron effects; user-configurable model architecture; Circuit simulation; Decoding; Driver circuits; Power supplies; Random access memory; Rivers; Signal generators; Switches; Switching circuits; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Technology, Design and Testing, 1995., Records of the 1995 IEEE International Workshop on
Conference_Location :
San Jose, CA
Print_ISBN :
0-8186-7102-5
Type :
conf
DOI :
10.1109/MTDT.1995.518076
Filename :
518076
Link To Document :
بازگشت