High voltage Schottky barrier diodes in synthetic single crystal diamond

Author

Brezeanu, M. ; Rashid, S.J. ; Butler, T. ; Rupesinghe, N.L. ; Udrea, F. ; Okano, K. ; Amaratunga, G.A.J. ; Twitchen, D.J. ; Tajani, A. ; Wort, C. ; Garraway, A. ; Coubeck, L. ; Taylor, P. ; Hask, D.G.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

2

fYear

2004

fDate

4-6 Oct. 2004

Firstpage

385

Abstract

Recent results proved the possibility of obtaining synthetic single crystal diamond with good crystal quality and excellent consistency. High voltage p-type Schottky barrier diodes (SBDs) have been fabricated on diamond, using gold (Au) as the Schottky metal and boron as doping material. In this study, on-state and off-state experimental and simulated data are presented and excellent theory-experiment agreement is revealed. The usage of diamond SBDs as ultra violet (UV) photodetectors is also analysed. On-state and off-state simulations, for different optical beam power densities, have been carried out and the theoretical data are provided.

Keywords

Schottky diodes; boron; current density; diamond; elemental semiconductors; gold; photodetectors; semiconductor device breakdown; semiconductor device models; C-Au:B; SBD; UV photodetectors; boron doping material; current density; gold Schottky metal; high voltage p-type Schottky barrier diodes; off-state simulations; on-state simulations; optical beam power densities; semiconductor device breakdown; synthetic single crystal diamond; ultra violet photodetectors; Boron; Crystalline materials; Doping; Gold; Inorganic materials; Optical materials; Photodetectors; Schottky barriers; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International

Print_ISBN

0-7803-8499-7

Type

conf

DOI

10.1109/SMICND.2004.1403025

Filename

1403025