Title :
SiC devices parameters effects on the electrical behaviour of mCascode switch
Author :
Boianceanu, C. ; Brezeanu, G. ; Udrea, F. ; Amaratunga, G. ; Brezeanu, M. ; Mihaila, A. ; Draghici, F. ; Enache, I. ; Visoreanu, A.
Author_Institution :
Politehnica Univ., Bucharest, Romania
Abstract :
This work is concerned with the behaviour of a hybrid Si/SiC high voltage switch in multiple cascode configuration. The influences of the threshold voltage and of β current factor of the SiC medium power J-FET on the performance of the switch are evinced.
Keywords :
elemental semiconductors; field effect transistor switches; junction gate field effect transistors; power semiconductor switches; semiconductor device models; silicon; silicon compounds; wide band gap semiconductors; Si-SiC; SiC devices parameters; SiC medium power J-FET; current factor; electrical properties; field effect transistor switches; hybrid Si-SiC high voltage switch; multiple cascode switch; power semiconductor switches; semiconductor device models; threshold voltage; FETs; HVDC transmission; Hybrid junctions; MOSFETs; Power semiconductor switches; Protection; Silicon carbide; Switching circuits; Temperature; Threshold voltage;
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
DOI :
10.1109/SMICND.2004.1403026
