CMOS bandgap with base-current thermal compensation

Author

Cajueiro, Jaã8o Paulo C ; Filho, Carlos A dog Reis

Author_Institution

Sch. of Electr. & Comput. Eng., UNICAMP, Campinas, Brazil

fYear

2002

fDate

2002

Firstpage

345

Lastpage

349

Abstract

This paper describes a CMOS bandgap voltage reference, which features a curvature compensation that is based on the thermal behavior of the base current. The core of the circuit uses vertical bipolar transistors and high resistive poly resistors (RPOLYH), as most currently implemented CMOS bandgap circuits, however arranged in a novel configuration. A three-bit digital trimming mechanism was incorporated in the circuit to adjust the reference voltage to its minimum TC value. Samples of the circuit were fabricated in 0.6 μm CMOS. Measurements in the range -40°C to +120°C showed that the temperature drift is less than 23 ppm/°C.

Keywords

CMOS analogue integrated circuits; bipolar transistor circuits; circuit simulation; compensation; integrated circuit design; integrated circuit measurement; integrated circuit modelling; resistors; thermal properties; voltage regulators; -40 to 120 C; 0.6 micron; CMOS bandgap voltage references; RPOLYH; base current thermal behavior curvature compensation; base-current thermal compensation; high resistive poly resistors; minimum TC value reference voltage adjustment; temperature drift; temperature operating range; three-bit digital trimming mechanism; vertical bipolar transistors; Bipolar transistors; CMOS digital integrated circuits; CMOS technology; Circuit stability; Circuit testing; Photonic band gap; Resistors; Temperature sensors; Thermal stability; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits and Systems Design, 2002. Proceedings. 15th Symposium on

Print_ISBN

0-7695-1807-9

Type

conf

DOI

10.1109/SBCCI.2002.1137681

Filename

1137681