DocumentCode :
2718462
Title :
A 2 cycle 1 Mbit 4 way set associative 4 way interleave multi-processor L2 directory with array access/cycle 2.5 nsec
Author :
Lattimore, G.M. ; Kumar, M. ; Poplawski, M., Jr.
Author_Institution :
STA Div., IBM Corp., Austin, TX, USA
fYear :
1995
fDate :
7-8 Aug 1995
Firstpage :
76
Lastpage :
81
Abstract :
An experimental 2-cycle, 1-Mbit, 4-way set-associative, 4-way interleave, multiprocessor L2 directory with array access and cycle time equal to 2.5 ns is described. The directory function has three components: (1) address transmission and arbitration around a 17.3×17.3 chip (~1/2 cycle), (2) directory array access (1 full cycle), and (3) tag compare (~1/2 cycle). The directory array access design uses a combination of self-resetting and synchronous techniques that allow the array access to span 2 clock cycles even though the array can be pipelined at a single cycle frequency. The combination of synchronous techniques with self-resetting circuits allows the array cycle time to functionally change with the machine cycle time, yielding a greater sense-amplifier margin at longer cycles while maintaining the pipelining benefits of self-resetting circuitry. The process that the design is based upon is a 0.5-micron technology with a 0.25-micron effective gate length and 5 layers of metal. The SRAM cell size is 4.6×7.2 microns2, a full 6-transistor cell with a single layer of poly, and a local area interconnect using a damascene tungsten process. The total directory area is 4 interleaves×5.6 mm×5.3 mm = 118.7 mm2
Keywords :
CMOS memory circuits; arrays; integrated circuit layout; integrated circuit technology; memory architecture; multiprocessing systems; 0.25 micron; 0.5 micron; 1 Mbit; 2.5 ns; 4-way set-associative, 4-way interleave, multiprocessor L2 directory; 4.6 micron; 5.3 mm; 5.6 mm; 6-transistor cell; 7.2 micron; SRAM cell size; address arbitration; address transmission; array access time; array cycle time; array pipelining; damascene tungsten process; directory area; directory array access; gate length; local area interconnect; machine cycle time; self-resetting circuitry; sense-amplifier margin; synchronous techniques; tag comparison; Automatic testing; CMOS technology; Circuit testing; Clocks; Decoding; Frequency; Integrated circuit interconnections; Test pattern generators; Timing; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Technology, Design and Testing, 1995., Records of the 1995 IEEE International Workshop on
Conference_Location :
San Jose, CA
Print_ISBN :
0-8186-7102-5
Type :
conf
DOI :
10.1109/MTDT.1995.518085
Filename :
518085
Link To Document :
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