Abstract :
This paper describes a revolutionary new technology for building high-performance DRAM memory systems that operate up to 10 times faster than conventional systems. With only a 9-bit wide interface, devices are capable of transferring data at over 500 MBytes per second. This technology is implemented using standard CMOS process, packaging and printed circuit fabrication techniques, and is suitable for cost-sensitive volume applications
Conference_Titel :
Memory Technology, Design and Testing, 1995., Records of the 1995 IEEE International Workshop on