Title :
MZOS storage correlator with modified DRAM cell
Author :
Boettcher, Ronald ; Buff, Werner
fDate :
Oct. 31 1994-Nov. 3 1994
Abstract :
A new acoustic monolithic semiconductor storage correlator has been investigated. A detailed description of the architecture and the device operation is presented for an metal-ZnO-oxide-silicon (MZOS) storage correlator with modified DRAM cell. The operation of this device is demonstrated in a common mode. This storage correlator was developed to overcome many limitations of the acoustic convolver and the p-n diode storage correlator. The transconductance parameter S of the sampling MOS transistors is a decisive parameter for a high efficiency of SAW sampling. Calculated results from theory show good performance capabilities
Keywords :
DRAM chips; MOSFET; electric admittance; semiconductor storage; surface acoustic wave correlation; MZOS storage correlator; SAW sampling; acoustic monolithic semiconductor storage correlator; architecture; common mode; device operation; high efficiency; metal-ZnO-oxide-silicon storage correlator; modified DRAM cell; performance capabilities; sampling MOS transistors; transconductance parameter S; Admittance; DRAM chips; MOSFETs; Surface acoustic wave correlators;
Conference_Titel :
Ultrasonics Symposium, 1994. Proceedings., 1994 IEEE
Conference_Location :
Cannes, France
Print_ISBN :
0-7803-2012-3
DOI :
10.1109/ULTSYM.1994.401571
