DocumentCode :
2718565
Title :
Electric and ferroelectric properties of Pb(Zr0.2Ti0.8)O3 thin films deposited by pulsed laser deposition on single crystalline substrates
Author :
Pintilie, L. ; Lisca, M. ; Alexe, M.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest, Romania
Volume :
2
fYear :
2004
fDate :
4-6 Oct. 2004
Firstpage :
415
Abstract :
Epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) thin films were grown on single crystalline Nb-doped SrTiO3 (STON) substrates by pulsed laser deposition (PLD). The top electrode was SrRuO3. The investigated electric and ferroelectric properties have revealed a strong asymmetry of the two PZT-electrode interfaces. A qualitative explanation based on the possible existence of a n+-p junction at the STON-PZT interface is suggested.
Keywords :
Schottky barriers; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric thin films; lead compounds; p-n junctions; semiconductor epitaxial layers; wide band gap semiconductors; PZT; PZT thin films; PZT-SrRuO3-Pt; PZT-electrode interface asymmetry; Pb(Zr0.2Ti0.8)O3 thin films; PbZrO3TiO3; PbZrO3TiO3-SrRuO3-Pt; SrTiO3:Nb; electric properties; ferroelectric properties; n-p junction; pulsed laser deposition; single crystalline Nb-doped SrTiO3 substrates; single crystalline substrates; Crystal microstructure; Crystallization; Dielectric thin films; Electrodes; Ferroelectric materials; Optical pulses; Pulsed laser deposition; Sputtering; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
Type :
conf
DOI :
10.1109/SMICND.2004.1403034
Filename :
1403034
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2718565
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