• DocumentCode
    2718693
  • Title

    Effect of temperature on the NO2 sensing properties of tellurium based films

  • Author

    Tsiulyanu, A. ; Tsiulyanu, D. ; Liess, D.

  • Author_Institution
    Dept. of Phys., Tech. Univ., Kishinau, Moldova
  • Volume
    2
  • fYear
    2004
  • fDate
    4-6 Oct. 2004
  • Firstpage
    429
  • Abstract
    Influence of temperature on the electrical and sensing properties toward NO2 of tellurium based films were investigated. Temperature-dependent electrical conductivity is strongly affected by the presence of an NO2 environment. The sensitivity toward NO2, being controlled by gas concentration, decreases with the operating temperature increase. On the other hand, the increase of operating temperature leads to a reduction of response-recovery times. The results are discussed taking into consideration the contributions of grain boundary as well as grain bulk and surface resistance to the total conductivity. It is assumed that the surface, including grain boundary, hole-enriched region is formed as a result of dangling bond chalcogen´s lone-pair electron interaction. Chemisorption of NO2 molecules is accompanied by hole enrichment of the surface and grain boundary region, due to interaction of these molecules with lone-pair electrons.
  • Keywords
    chemisorption; dangling bonds; electrical conductivity; gas sensors; grain boundaries; nitrogen compounds; semiconductor thin films; surface resistance; tellurium compounds; NO2; NO2 sensing properties; chemisorption; dangling bond chalcogen lone pair electron interaction; electrical conductivity; electrical properties; gas concentration; grain boundary; grain bulk; hole enriched region; response recovery time; surface resistance; tellurium based films; Charge carrier processes; Conductivity; Electric resistance; Grain boundaries; Sensor phenomena and characterization; Surface morphology; Surface resistance; Tellurium; Temperature sensors; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
  • Print_ISBN
    0-7803-8499-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2004.1403039
  • Filename
    1403039