Analytical test of the film/substrate boundary perfection in SnO2 thin films

This work estimates the perfection of films/substrate boundary quality in SnO₂ thin films. The relation between activation energy of film conductivity and film thickness is studied. The numerical simulation show that electrical conductivity of SnO₂ thin film near 3D-2D transition is described well within the framework of percolation theory. In some cases the dependence of the activation energy on the film thickness allows one to examine the film perfection. Thus, the relation between electrical conductivity, film microstructure, and thickness gives an effective instrument to control thin film gas sensor parameters.