Title :
Highly-oriented PNZT ferroelectric thin films on Pt/Ti/SiO2 /Si substrate
Author :
Ding, A.L. ; Xu, J.B. ; Luo, W.G. ; Qu, X.P. ; Qiu, P.S. ; Wong, H.K. ; Wilson, I.H.
Author_Institution :
Inst. of Ceramics, Acad. Sinica, Shanghai, China
Abstract :
Highly-oriented PNZT (Nb2O5 doped-PZT) ferroelectric thin films on Pt/Ti/SiO2 substrates were prepared by RF magnetron sputtering at low temperature and with a subsequent annealing process. The structure of the films was found to be strongly dependent on processing conditions. The annealing temperature and total pressure of sputtering were were crucial parameters that strongly influenced the preferred (100) crystallographic orientation in the films. The crystallinity of the films has been investigated by X-ray diffraction analysis. Also the surface morphology of the films has been studied using an atomic force microscope (AFM) and a scanning electron microscope (SEM). It is found that the higher the degree of preferred (100) orientation the higher the polarization of PNZT films
Keywords :
X-ray diffraction; atomic force microscopy; crystal orientation; dielectric polarisation; ferroelectric thin films; lead compounds; niobium compounds; piezoceramics; rapid thermal annealing; scanning electron microscopy; sputter deposition; surface structure; AFM; PZT:Nb2O5; PbZrO3TiO3:Nb2O5; Pt-Ti-SiO2-Si; Pt/Ti/SiO2/Si substrate; RF magnetron sputtering; RTA; SEM; Si; X-ray diffraction analysis; annealing process; annealing temperature; film crystallinity; film structure; highly-oriented PNZT ferroelectric thin films; polarization; preferred (100) crystallographic orientation; processing conditions; surface morphology; total sputtering pressure; Annealing; Atomic force microscopy; Ferroelectric films; Ferroelectric materials; Niobium; Radio frequency; Scanning electron microscopy; Sputtering; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.598153
