DocumentCode
2719337
Title
Room temperature imaging above one terahertz by field effect transistor as detector
Author
Nadar, S. ; Coquillat, D. ; Sakowicz, M. ; Videlier, H. ; Klimenko, O. ; Teppe, F. ; Dyakonova, N. ; Knap, W. ; Seliuta, D. ; Kasalynas, I. ; Valusis, G.
Author_Institution
Groupe d´´Etude des Semi-conducteurs, Univ. Montpellier 2, Montpellier, France
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
1
Abstract
GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 μm. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.
Keywords
III-V semiconductors; field effect transistors; gallium arsenide; submillimetre wave detectors; submillimetre wave imaging; terahertz wave detectors; GaAs; field effect transistors; frequency 1.63 THz; room temperature imaging; single pixel imaging; temperature 293 K to 298 K; temperature 300 K; transmission mode; Detectors; FETs; Frequency measurement; Gallium arsenide; Imaging; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612983
Filename
5612983
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