Title :
2 V 120 nsec 8/16-bit microcontroller with embedded flash EEPROM
Author :
Fukumoto, Takahiro ; Hirano, Hiroshige ; Chaya, Shigeo ; Maejima, Takashi ; Honda, Toshiyuki ; Sumi, Tatsumi ; Michiyama, Junji ; Ariga, Rie ; Akashi, Takuo ; Watanabe, Seiji
Author_Institution :
Kyoto Res. Lab., Matsushita Electron. Corp., Kyoto, Japan
Abstract :
A conventional single-transistor Flash EEPROM memory has been integrated into a 0.8 μm double-metal CMOS high speed low voltage process for custom integrated circuit applications. In general, this type of cell is not suitable for low voltage high speed read applications, because of the broad distribution of its threshold voltage after erasing. We overcome this issue by the novel 2 step erase-verify algorithm to precisely control the threshold voltage throughout the entire memory cells after erasing. In conjunction with this algorithm, several novel circuits design technology has achieved 2 V 120 nsec 8/16 bit microcontroller with embedded 64 Kbyte Flash EEPROM
Keywords :
CMOS memory circuits; EPROM; application specific integrated circuits; microcontrollers; 0.8 micron; 120 ns; 16 bit; 2 V; 64 kbyte; 8 bit; custom integrated circuit; double-metal CMOS high speed low voltage process; embedded flash EEPROM; microcontroller; single-transistor memory; threshold voltage; two step erase-verify algorithm; Annealing; CMOS process; CMOS technology; EPROM; Laboratories; Low voltage; Microcontrollers; Nonvolatile memory; Threshold voltage; Voltage control;
Conference_Titel :
Custom Integrated Circuits Conference, 1995., Proceedings of the IEEE 1995
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-2584-2
DOI :
10.1109/CICC.1995.518157
