Title :
Photodetection mechanisms in floating gate photoconductors with far-infrared quantum well intersubband transitions
Author :
Ledwosinska, E. ; Szkopek, T.
Author_Institution :
McGill Univ., Montréal, QC, Canada
Abstract :
We present two mechanisms of far-infrared detection using a GaAs/AlGaAs double-quantum well floating-gate heterostructure The conductance of a well region is modulated by photoionized electrons that either tunnel into an underlying transistor channel, or are trapped by DX centres. We report responsivities of 100 A/W and 160 A/J, and operating temperatures of up to 30 K and 100 K, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photoconducting materials; photodetectors; GaAs-AlGaAs; far-infrared detection; far-infrared quantum well intersubband transitions; floating gate photoconductors; photodetection mechanisms; photoionized electrons; temperature 100 K; temperature 30 K; Frequency measurement; HEMTs; Logic gates; Photoconducting materials; Photonics; Temperature measurement;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612986
