Title :
Terahertz responsivity enhancement of silicon CMOS transistor-based detectors using a current bias
Author :
Boppel, S. ; Lisauskas, A. ; Voltolina, F. ; Bolívar, P. Haring ; Roskos, H.G.
Author_Institution :
Phys. Inst., Johann Wolfgang Goethe-Univ. Frankfurt, Frankfurt am Main, Germany
Abstract :
We report on a responsivity enhancement of silicon CMOS transistor-based detectors for terahertz radiation by the application of a source-to-drain bias current.
Keywords :
CMOS integrated circuits; microwave integrated circuits; terahertz wave detectors; silicon CMOS transistor; source-to-drain bias current; terahertz detector; terahertz responsivity enhancement; CMOS integrated circuits; Detectors; HEMTs; Imaging; Logic gates; Silicon;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612994
