Title :
Sub-terahertz imaging with AlGaN/GaN MISFETs
Author :
Nadar, S. ; Klimenko, O. ; Videlier, H. ; Coquillat, D. ; Dyakonova, N. ; Teppe, F. ; Knap, W. ; Madjour, K. ; Ducournau, G. ; Gaquiére, C. ; Poisson, M.A. ; Torres, J. ; Szczytko, J. ; Dobroiu, A. ; Otani, C.
Author_Institution :
Groupe d´´Etude des Semiconducteurs, Univ. Montpellier 2, Montpellier, France
Abstract :
We evaluate the optical performance of AlGaN/GaN MISFETs as a non-resonant sub-terahertz, room temperature detector. The single-pixel responsivity and the noise equivalent power are determined. The efficiency of the detection is demonstrated by the room temperature imaging of different solutions of acetone in cyclohexane.
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium compounds; organic compounds; terahertz wave detectors; terahertz wave imaging; wide band gap semiconductors; AlGaN-GaN; MISFET; acetone; cyclohexane; noise equivalent power; nonresonant subterahertz room temperature detector; single-pixel responsivity; subterahertz imaging; temperature 293 K to 298 K; Aluminum gallium nitride; Detectors; Gallium nitride; Imaging; Logic gates; MISFETs; Noise;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612996
