• DocumentCode
    2719827
  • Title

    Photoconductivity of Pb1−XSnXTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range

  • Author

    Ryabova, Ludmila ; Dobrovolsky, Alexander ; Chernichkin, Vladimir ; Khokhlov, Dmitry ; Dashevsky, Zinovy ; Kasiyan, Vladimir ; Nicorici, Andrei ; Ganichev, Sergey ; Danilov, Sergey ; Kov, Vassily Bel

  • Author_Institution
    Moscow State Univ., Moscow, Russia
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Photoconductive response at wavelengths up to 500 μm has been detected in Pb1-XSnXTe(In) solid solutions. The effect is observed both in the semi-insulating state and at high levels of electron gas degeneracy. The film microstructure affects the photosensitivity strongly.
  • Keywords
    IV-VI semiconductors; electron gas; lead compounds; narrow band gap semiconductors; photoconductivity; semiconductor thin films; tin compounds; Pb1-XSnXTeIn; electron gas degeneracy; microstructure; narrow-gap semiconductors; photoconductivity; photosensitivity; semi-insulating state; solid solutions; structure; Films; Grain size; Impurities; Photoconductivity; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5613010
  • Filename
    5613010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2719827