Proposal for a simplified CMOS VLSI fabrication sequence

A simple modification of the standard CMOS process flow has been recently proposed whose goal is the process simplification: the well formation and the local oxidation (typically separated process phases) in this proposed modified process (DW-LOCOS) are simultaneously obtained by performing the well drive-in in dry O₂ ambient. The aim of this work is to outline the possible advantages and drawbacks of the DW-LOCOS implementation in a standard CMOS process