DocumentCode
2720498
Title
Measurement of higher-order exciton resonances in GaAs quantum wells via shift-current-THz-spectroscopy at room temperature
Author
Priyadarshi, S. ; Pierz, K. ; Siegner, U. ; Dawson, P. ; Bieler, M.
Author_Institution
Phys.-Tech. Bundesanstalt, Braunschweig, Germany
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
We generate ultrafast photocurrents in GaAs quantum wells and measure the simultaneously emitted THz radiation. This THz spectroscopy allows for the detection of the transition energies of higher-order exciton resonances at room temperature. This method can be more sensitive than conventional photoluminescence experiments.
Keywords
III-V semiconductors; excitons; gallium arsenide; photoconductivity; photoemission; semiconductor quantum wells; terahertz wave spectra; GaAs; GaAs quantum wells; higher-order exciton resonances; shift-current-terahertz-spectroscopy; simultaneously emitted terahertz radiation; temperature 293 K to 298 K; transition energies; ultrafast photocurrents; Excitons; Gallium arsenide; Optical pulses; Optical sensors; Photonics; Scattering; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5613049
Filename
5613049
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