Precise measurements of optical constants of SiC in 40 to 120 µm wavelength region

Author

Nakayama, K. ; Matsubara, A. ; Okajima, S. ; Kawahata, K. ; Tanaka, K. ; Akiyama, T. ; Kinoshita, Hiroyuki ; Yoshimoto, M. ; Takahashi, T.

Author_Institution

Chubu Univ., Kasugai, Japan

fYear

2010

fDate

5-10 Sept. 2010

Firstpage

1

Lastpage

2

Abstract

Optical constants of 6H-SiC have been measured by using far infrared (FIR) lasers of 48, 57, 71, and 119 μm in wavelength. The refractive index and absorption coefficient at the wavelength have been determined from the transmittance of a rotating SiC etalon. For the application of the SiC to optical elements in the FIR region, it was compared with other materials (crystal quartz, high resistive silicon, and CVD-diamond).

Keywords

absorption coefficients; infrared spectra; optical materials; refractive index; silicon compounds; wide band gap semiconductors; 6H-SiC; CVD-diamond; SiC; absorption coefficient; crystal quartz; far infrared lasers; far infrared region; high resistive silicon; optical constants; optical elements; refractive index; rotating SiC etalon transmittance; wavelength 40 mum to 120 mum; Absorption; Measurement by laser beam; Optical reflection; Optical refraction; Optical variables control; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Conference_Location

Rome

Print_ISBN

978-1-4244-6655-9

Type

conf

DOI

10.1109/ICIMW.2010.5613056

Filename

5613056