Title :
Temperature studies of dielectric loss in Silicon Carbide
Author :
Jones, C.R. ; Gao, Yuanci
Author_Institution :
Dept. of Phys., North Carolina Central Univ., Durham, NC, USA
Abstract :
Results for the variation of loss tangent with temperature will be reported for crystalline Silicon Carbide and compared with theoretical expectations based on a two-phonon difference process.
Keywords :
dielectric losses; silicon compounds; wide band gap semiconductors; SiC; crystalline silicon carbide; dielectric loss; loss tangent; temperature studies; two-phonon difference process; Conferences; Dielectric losses; Optical resonators; Silicon carbide; Temperature distribution; Temperature measurement;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5613071
