• DocumentCode
    2721110
  • Title

    Reliability analyses on a TSV structure for CMOS image sensor

  • Author

    Lwo, Ben-Je ; Ni, Chung-Yen

  • Author_Institution
    Dept. of Mechatron., Energy & Aerosp. Eng., Nat. Defense Univ., TaShi, Taiwan
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    76
  • Lastpage
    79
  • Abstract
    In order to assess the reliability behavior of a typical TSV structure, this study describes the reliability tests to qualify the samples with three types of the TSV test-keys, which includes the Kelvin structure, the via-chain, and the meander metal lines. With enough number of the samples for statistic analyses, resistances of the samples were first found increased after the preconditioning process. The temperature cycling tests (TCT) and the temperature humidity cycling tests (THTC) were next performed according to the JEDEC standards, and resistances variations on the samples were recorded during the tests. The Weibull parameters for the testing samples were finally extracted from the testing data to obtain the lifetime performance of the samples.
  • Keywords
    CMOS image sensors; statistical analysis; three-dimensional integrated circuits; CMOS image sensor; JEDEC standards; Kelvin structure; TSV structure; TSV test-keys; Weibull parameters; meander metal lines; reliability analyses; statistic analyses; temperature cycling tests; temperature humidity cycling tests; Electrical resistance measurement; Kelvin; Reliability; Resistance; Standards; Through-silicon vias; Reliability; TSV (Through Silicon Via); Temperature Cycling Test (TCT); Temperature Humidity Cycling Test (THCT);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248809
  • Filename
    6248809