DocumentCode :
2721110
Title :
Reliability analyses on a TSV structure for CMOS image sensor
Author :
Lwo, Ben-Je ; Ni, Chung-Yen
Author_Institution :
Dept. of Mechatron., Energy & Aerosp. Eng., Nat. Defense Univ., TaShi, Taiwan
fYear :
2012
fDate :
May 29 2012-June 1 2012
Firstpage :
76
Lastpage :
79
Abstract :
In order to assess the reliability behavior of a typical TSV structure, this study describes the reliability tests to qualify the samples with three types of the TSV test-keys, which includes the Kelvin structure, the via-chain, and the meander metal lines. With enough number of the samples for statistic analyses, resistances of the samples were first found increased after the preconditioning process. The temperature cycling tests (TCT) and the temperature humidity cycling tests (THTC) were next performed according to the JEDEC standards, and resistances variations on the samples were recorded during the tests. The Weibull parameters for the testing samples were finally extracted from the testing data to obtain the lifetime performance of the samples.
Keywords :
CMOS image sensors; statistical analysis; three-dimensional integrated circuits; CMOS image sensor; JEDEC standards; Kelvin structure; TSV structure; TSV test-keys; Weibull parameters; meander metal lines; reliability analyses; statistic analyses; temperature cycling tests; temperature humidity cycling tests; Electrical resistance measurement; Kelvin; Reliability; Resistance; Standards; Through-silicon vias; Reliability; TSV (Through Silicon Via); Temperature Cycling Test (TCT); Temperature Humidity Cycling Test (THCT);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2012.6248809
Filename :
6248809
Link To Document :
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