Asymmetrical Spurline Resonator Design and its Application to Power Amplifiers

Author

Liu, Hai-Wen ; Tong, Fu ; Li, Xiao-Hua

Author_Institution

CAS, Inst. of Opt. & Electron., Chengdu

fYear

2008

fDate

14-15 Dec. 2008

Firstpage

149

Lastpage

152

Abstract

An improved spurline structure with two rejection bands is presented in this paper, which consists of asymmetrical spurline resonators and embedded directly into microstrip line. Asymmetrical spurline resonators provide dual-bandgap characteristics and slow-wave effect. Furthermore, asymmetrical spurline structure with dual rejection bands is proposed to reduce the higher harmonics of microwave power amplifiers. To evaluate the effect of asymmetrical spurline resonators on microwave amplifiers, two InGaP HBT power amplifiers were designed and fabricated. One of them has asymmetrical spurline structure at the output section, while the other has a conventional 50-Omega microstrip line only. Results show that asymmetrical spurline structure suppresses the second and third harmonics more than 27 dB at the output and yields improved power added efficiency (PAE) and output power by 6-8% and 1-4%, respectively.

Keywords

III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; microstrip lines; microstrip resonators; microwave bipolar transistors; microwave power amplifiers; power semiconductor devices; wide band gap semiconductors; HBT power amplifiers; InGaP; asymmetrical spurline resonator; dual-bandgap characteristics; microstrip line; microwave power amplifiers; rejection bands; slow-wave effect; Broadband amplifiers; Microstrip resonators; Microwave amplifiers; Optical amplifiers; Optical resonators; Periodic structures; Photonic band gap; Power amplifiers; Power harmonic filters; Spurline components; Asymmetrical spurline structure; bandgap; harmonics suppression; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Art of Miniaturizing RF and Microwave Passive Components, 2008. IMWS 2008. IEEE MTT-S International Microwave Workshop Series on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-2876-2

Electronic_ISBN

978-1-4244-2877-9

Type

conf

DOI

10.1109/IMWS.2008.4782285

Filename

4782285