Title :
Asymmetrical Spurline Resonator Design and its Application to Power Amplifiers
Author :
Liu, Hai-Wen ; Tong, Fu ; Li, Xiao-Hua
Author_Institution :
CAS, Inst. of Opt. & Electron., Chengdu
Abstract :
An improved spurline structure with two rejection bands is presented in this paper, which consists of asymmetrical spurline resonators and embedded directly into microstrip line. Asymmetrical spurline resonators provide dual-bandgap characteristics and slow-wave effect. Furthermore, asymmetrical spurline structure with dual rejection bands is proposed to reduce the higher harmonics of microwave power amplifiers. To evaluate the effect of asymmetrical spurline resonators on microwave amplifiers, two InGaP HBT power amplifiers were designed and fabricated. One of them has asymmetrical spurline structure at the output section, while the other has a conventional 50-Omega microstrip line only. Results show that asymmetrical spurline structure suppresses the second and third harmonics more than 27 dB at the output and yields improved power added efficiency (PAE) and output power by 6-8% and 1-4%, respectively.
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; microstrip lines; microstrip resonators; microwave bipolar transistors; microwave power amplifiers; power semiconductor devices; wide band gap semiconductors; HBT power amplifiers; InGaP; asymmetrical spurline resonator; dual-bandgap characteristics; microstrip line; microwave power amplifiers; rejection bands; slow-wave effect; Broadband amplifiers; Microstrip resonators; Microwave amplifiers; Optical amplifiers; Optical resonators; Periodic structures; Photonic band gap; Power amplifiers; Power harmonic filters; Spurline components; Asymmetrical spurline structure; bandgap; harmonics suppression; power amplifier;
Conference_Titel :
Art of Miniaturizing RF and Microwave Passive Components, 2008. IMWS 2008. IEEE MTT-S International Microwave Workshop Series on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-2876-2
Electronic_ISBN :
978-1-4244-2877-9
DOI :
10.1109/IMWS.2008.4782285
