DocumentCode :
2721766
Title :
Assembly and packaging technologies for high-temperature SiC sensors
Author :
Zeiser, Roderich ; Wagner, Phillip ; Wilde, Juergen
Author_Institution :
IMTEK, Univ. of Freiburg, Freiburg, Germany
fYear :
2012
fDate :
May 29 2012-June 1 2012
Firstpage :
338
Lastpage :
343
Abstract :
Silicon carbide is a promising semiconductor material for sensor applications in harsh environments. To operate SiC-MEMS at high temperature, reliable assembly and packaging technologies are needed. In this paper, packaging technologies for die-attachment and interconnection suitable for SiC-Sensors are presented. They are investigated on their stability, reliability and their thermo-mechanical influence on the sensor element. Active metal brazing, glass soldering and ceramic bonding are used as mounting technologies and Platinum and Palladium wires for electrical interconnection. Different material combinations were examined. Silicon test-chips processed in thin film technology with a metallization suitable for harsh environments were used for conducting and characterization of the technologies. The test-chips were mounted on Al2O3, AlN and Si3N4 substrates to examine the influence of the sensor substrate. The mechanical stress in the chip induced by the packaging process was analyzed by an optical measurement of the chips surface, correlated to an analytical approach and compared to FEM-simulations. The investigation of the mechanical stability of the material compounds was carried out by shear-tests before and after 100 hours storage at 500°C. In this study the glass-solder process with an AlN sensor substrate is the most suited technology in case of the reliability of SiC-MEMS.
Keywords :
bonding processes; brazing; interconnections; mechanical stability; microassembling; microsensors; palladium; platinum; semiconductor device metallisation; semiconductor device packaging; semiconductor device reliability; semiconductor thin films; silicon compounds; surface mount technology; temperature sensors; wide band gap semiconductors; wires (electric); Al2O3; AlN; FEM-simulations; MEMS packaging technology; MEMS reliability; Pd; Pt; Si3N4; SiC; active metal brazing; ceramic bonding; die-attachment; electrical interconnection; glass soldering; glass-solder process; high-temperature sensor assembly; interconnection; material compounds; mechanical stability; mechanical stress; metallization; mounting technology; optical measurement; palladium wires; platinum wires; reliability; semiconductor material; sensor element; sensor substrate; shear-tests; silicon test-chips; temperature 500 degC; thin film technology; time 100 hour; Assembly; Ceramics; Stress; Substrates; Temperature; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2012.6248852
Filename :
6248852
Link To Document :
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