Analysis of Electron and Hole Distributions on Scaled NBit Flash Cells

Charge profiling methodology, re-building the localized charge profile of NBit cell in TCAD environment by comparing I_D-V _G and GIDL curves, is exercised to disclose the distributions of injected electrons and holes after P/E cycle. The mismatch between the profiles of electrons and holes is actually observed. Besides, the difference of injected electrons between long and short channel devices are also examined by the same way. It is observed that as the cell length is scaled down, fewer electrons are needed to achieve the same DeltaV_T and the distribution of injected electrons is narrower