DocumentCode
2722010
Title
P-channel SONOS Transient Current Modeling for Program and Erase
Author
Du, Pei-Ying ; Guo, Jyh-Chyurn ; Lee, H.M. ; Chen, H.M. ; Shen, Rick ; Hsu, C.C.-H.
Author_Institution
Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Rd, Hsinchu, Taiwan, R.O.C.
fYear
2006
fDate
38808
Firstpage
1
Lastpage
2
Abstract
Transient current models with time and field dependence are proposed. The time dependence follows asymptotic t-1 behavior with slower tunneling rate for erase (ERS) than program (PGM). The field dependence follows FN tunneling in higher field for PGM and intermediate field for ERS with relatively higher corner field for saturation. The models have been justified for P-channel SONOS (P-SONOS) with splits of ONO scheme.
Keywords
CMOS technology; Dielectrics; Electron traps; Electronics industry; Energy states; Industrial electronics; Oxidation; SONOS devices; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251116
Filename
4016589
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