Title :
Novel T shape structure PCM and Electrical-Thermal Characteristics
Author :
Wang, W.H. ; Chao, D.S. ; Chen, Y.C. ; Lee, C.M. ; Hsu, H.H. ; Chuo, Y. ; Tseng, M.H. ; Lee, M.H. ; Chen, W.S. ; Kao, M.J. ; Tsai, M.J.
Author_Institution :
Electron. Res. & Service Organ., ITRI, Hsinchu
Abstract :
Novel interfacial layer structure was proposed with adjustable resistance ratio and more uniform data distribution capabilities. The reduction of writing power can also be expected with further optimizing the materials and corresponding thicknesses. The performance will be even better with the shrinking of contact area
Keywords :
interface structure; phase change materials; semiconductor storage; T shape structure; electrical-thermal characteristics; interfacial layer structure; phase change memory; Amorphous materials; CMOS technology; Conductivity; Electric resistance; Nonvolatile memory; Paper technology; Phase change materials; Plugs; Shape; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251057
