DocumentCode
2722086
Title
A New Read Method by Using DIBL Characteristics in Nitride Storage Device
Author
Chiang, L.P. ; Chen, P.A. ; Hung, C.H. ; Tsao, C.P. ; Liao, H.H. ; Lin, C.H.
Author_Institution
NVM Div., Winbond Electron. Corp., Hsinchu
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
2
Abstract
A new read operation scheme by using the differential of the threshold voltage (or current) is proposed in nitride storage memory devices. By utilizing the DIBL characteristics between program state and erase state, the principle and application of this cell read operation either in single bit or in two bits is demonstrated. Finally, the application for multi-level operation is proposed
Keywords
semiconductor storage; DIBL characteristics; erase state; nitride storage device; nitride storage memory devices; program state; read operation scheme; threshold current; threshold voltage; Charge carrier processes; Costs; Degradation; Electron traps; Hot carriers; Manufacturing; Nonvolatile memory; Split gate flash memory cells; Tellurium; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251058
Filename
4016594
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