Title :
Optimization of Source/Drain Extension for Robust Speed Performance to Process Variation in Undoped Double-Gate CMOS
Author :
Yang, Ji-Woon ; Pham, Daniel ; Zeitzoff, Peter ; Huff, Howard ; Brown, George
Author_Institution :
SEMATECH, Austin, TX
Abstract :
The speed performance of undoped double-gate CMOS with a gate-source/drain underlap structure is investigated using a 2D device and compact model simulation. The gate-source/drain underlap structure yields optimal characteristics and shows robustness to process variation when the structure is optimized
Keywords :
MOSFET; semiconductor device models; 2D device; drain extension; drain underlap structure; gate-source structure; process variation; robust speed performance; source extension; undoped double-gate CMOS; CMOS process; CMOS technology; Character generation; Doping; Immune system; MOSFETs; Medical simulation; Robustness; Semiconductor device modeling; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251061
