DocumentCode :
2722159
Title :
Mo Gate Deformation Induced by Laser Annealing Process
Author :
Shibahara, Kentaro ; Matsuno, Akira ; Hino, Masaki ; Kurobe, Ken-ichi
fYear :
2006
fDate :
24-26 April 2006
Firstpage :
1
Lastpage :
2
Abstract :
Laser annealing is a promising candidate for ultra-shallow junction formation. However, melt-annealing that utilizes fast recrystallization to achieve non-equilibrium activation tends to accompany undesirable melting at portions other than junction areas. In this paper, deformation of Mo gate is discussed through experimental and simulation work
Keywords :
deformation; laser beam annealing; molybdenum; Mo; fast recrystallization; gate deformation; laser annealing process; melt-annealing process; nonequilibrium activation; ultra-shallow junction formation; Annealing; Deformable models; Laser modes; Laser theory; Nitrogen; Optical pulses; Poles and towers; Robustness; Solids; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2006.251062
Filename :
4016598
Link To Document :
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