DocumentCode
2722290
Title
Strain-Induced Channel Backscattering Modulation in Nanoscale CMOSFETs
Author
Chen, Hung-Wei ; Lin, Hong-Nien ; Ko, Chih-Hsin ; Ge, Chung-Hu ; Lin, Horng-Chih ; Huang, Tiao-Yuan ; Lee, Wen-Chin
Author_Institution
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
2
Abstract
The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballistic efficiency with fair accuracy. The mechanism of drain current dependence on strain-induced mobility change was also investigated based on channel backscattering theory
Keywords
MOSFET; ballistic transport; carrier mobility; electron backscattering; nanoelectronics; ballistic efficiency; channel backscattering modulation; channel backscattering ratios; channel backscattering theory; drain current dependence; nanoscale CMOSFET; strain-induced mobility change; strain-induced modulation; Analytical models; Backscatter; CMOSFETs; Costs; MOSFETs; Nanoscale devices; Semiconductor device manufacture; Stress; Threshold voltage; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251067
Filename
4016603
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