Title :
Strain-Induced Channel Backscattering Modulation in Nanoscale CMOSFETs
Author :
Chen, Hung-Wei ; Lin, Hong-Nien ; Ko, Chih-Hsin ; Ge, Chung-Hu ; Lin, Horng-Chih ; Huang, Tiao-Yuan ; Lee, Wen-Chin
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
Abstract :
The channel backscattering ratios as well as the ballistic efficiency of strained CMOSFETs were studied for both nondegenerate and degenerate-limited cases. We found that the simple nondegenerate assumption can predict strain-induced change of ballistic efficiency with fair accuracy. The mechanism of drain current dependence on strain-induced mobility change was also investigated based on channel backscattering theory
Keywords :
MOSFET; ballistic transport; carrier mobility; electron backscattering; nanoelectronics; ballistic efficiency; channel backscattering modulation; channel backscattering ratios; channel backscattering theory; drain current dependence; nanoscale CMOSFET; strain-induced mobility change; strain-induced modulation; Analytical models; Backscatter; CMOSFETs; Costs; MOSFETs; Nanoscale devices; Semiconductor device manufacture; Stress; Threshold voltage; Uniaxial strain;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251067
