DocumentCode
2722298
Title
1.8-V 10-GHZ ring VCO design using 0.18- μm CMOS technology
Author
Hai Qi Liu ; Wang Ling Goh ; Liter Siek
Author_Institution
Centre for Integrated Circuits & Syst., Nanyang Technol. Univ.
fYear
2005
fDate
25-28 Sept. 2005
Firstpage
77
Lastpage
78
Abstract
This paper presents a three-stage 0.18-mum CMOS ring oscillator for use at 10-GHz. The circuit utilizes the feedforward technique in the delay cells. Together with the positive feedback provided by a cross-coupled nMOS pair in each delay cell, the performance of the oscillator is further enhanced. The output frequency ranges from 10.5 to 8.1 GHz with control voltages varying from 0 to 1.5 V. The phase noise is -92 dBc/Hz at 1-MHz offset from the center frequency of 9.5 GHz
Keywords
CMOS integrated circuits; circuit feedback; microwave oscillators; phase noise; voltage-controlled oscillators; 0 to 1.5 V; 0.18 micron; 1.8 V; 10.5 to 8.1 GHz; CMOS ring oscillator; CMOS technology; cross-coupled nMOS; delay cell; feedforward technique; phase noise; positive feedback; ring VCO design; voltage controlled oscillator; CMOS technology; Circuits; Delay; Feedback; Frequency; MOS devices; Phase noise; Ring oscillators; Voltage control; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
SOC Conference, 2005. Proceedings. IEEE International
Conference_Location
Herndon, VA
Print_ISBN
0-7803-9264-7
Type
conf
DOI
10.1109/SOCC.2005.1554459
Filename
1554459
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