Author :
Xiao, Deyuan ; Chen, Gary ; Lee, Roger ; Lu, Daniel ; Tan, Leong ; Liu, Yung ; Shen, C.C. ; Kim, Jong Woo
Author_Institution :
Memory Technol. Dev. Center, Semicond. Manuf. Int. Corp., Shanghai
Abstract :
A new planar split dual gate MOSFET device (PSDG MOSFET) is reported for the first time. The theoretical calculation, 3D device simulation as well as the experiment data show that with the two independent split dual gates in PSDG MOSFET, it can provide dynamical control of the device characteristics, such as threshold voltage (Vt) and sub-threshold swing (SS) as well as the Idsat of the device
Keywords :
MOSFET; semiconductor device models; 3D device simulation; PSDG MOSFET; dynamical control; planar split dual gate MOSFET; CMOS technology; Dielectrics; Energy management; Leakage current; MOSFET circuits; Modeling; Partial response channels; Semiconductor device manufacture; Threshold voltage; Voltage control;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251068
