Title :
A new carrier structure for TSV thin wafer handling
Author :
Chen, Ming-Chih ; Hsieh, Frank ; Hu, Dyi-Chung
Author_Institution :
Technol. Center, Unimicron Technol., Inc., Hsin-Feng, Taiwan
fDate :
May 29 2012-June 1 2012
Abstract :
Existing popular temporary bonding techniques for TSV thin wafer handling can be classified into three categories: (1) Carrier with via hole structure, for example: solution provided by TOK (zero Newton) process (2) Adhesion Layer separation type, for example: solution provided by 3M (WSS) process (3) High temperatures debonding process, solution for example: provided by Brewer Science (HT) process. Each type has its own challenges; for example: The carrier used in type 1 is easy to crack; the adhesive layer in type 2 may leave residues after high temperature process, and type (3) process need high temperature for de-bonding. Beside these issues, the investments in equipment and materials cost millions of dollars thus prevent wide application for TSV. Hence, it is desirable to have a low cost solution for the thin wafer carrier process.
Keywords :
adhesive bonding; integrated circuit bonding; integrated circuit packaging; three-dimensional integrated circuits; TSV thin wafer handling; adhesion layer separation; carrier structure; high temperature process; high temperatures debonding process; temporary bonding technique; via hole structure; Adhesives; Charge carrier processes; Materials; Solvents; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2012.6248885