DocumentCode
2722350
Title
High temperature operation of InGaAsP laser diode with increased electron barrier by paired modulation doping structure
Author
Kim, Il-Won ; Seong, Seung Hyeon ; Yu, Joo N Sang ; Jeong, Dae Cheol ; Kang, Jung Koo ; Kim, Hyo Jeong ; Ryu, Sang Wan
Author_Institution
Dept. of Phys., Chonnam Nat. Univ., Gwangju
fYear
2008
fDate
7-10 July 2008
Firstpage
1
Lastpage
2
Abstract
High temperature operation of an InGaAsP laser was demonstrated with a paired modulation doping structure. The laser showed superior performances such as low threshold current, high optical power, and high speed modulation at high temperature.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor lasers; InGaAsP; electron barrier; high-speed modulation; high-temperature laser operation; laser diode; optical power; paired modulation doping structure; threshold current; Diode lasers; Electrons; Epitaxial layers; Laser theory; Optical design; Optical materials; Quantum well devices; Semiconductor device doping; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the
Conference_Location
Sydney
Print_ISBN
978-0-85825-807-5
Electronic_ISBN
978-0-85825-807-5
Type
conf
DOI
10.1109/OECCACOFT.2008.4610372
Filename
4610372
Link To Document