Title :
A Novel Deep Trench Isolation Featuring Airgaps for a High-Speed 0.13μm SiGe:C BiCMOS Technology
Author :
Choi, L.J. ; Kunnen, E. ; Van Huylenbroeck, Stefaan ; Piontek, A. ; Sibaja-Hemandez, A. ; Vleugels, F. ; Dupont, T. ; Leray, P. ; Devriendt, K. ; Shi, X.P. ; Loo, R. ; Vanhaelemeersch, S. ; Decoutere, S.
Author_Institution :
IMEC Interuniv. Microelectron. Center, Leuven
Abstract :
A novel scheme for deep trench isolation is presented, which uses an airgap as insulator. When incorporated in our 0.13mum SiGe:C BiCMOS technology, the peripheral substrate parasitics decrease with an order of magnitude to a record value of 0.02fF/mum, which significantly improves the device RF performance
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; air gaps; high-speed integrated circuits; isolation technology; 0.13 micron; BiCMOS technology; SiGe:C; airgaps; deep trench isolation; peripheral substrate parasitics; BiCMOS integrated circuits; Capacitance; Diffusion tensor imaging; Filling; Isolation technology; Microelectronics; Plugs; Radio frequency; Substrates; Thermal resistance;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251079
