• DocumentCode
    2722495
  • Title

    A Novel Deep Trench Isolation Featuring Airgaps for a High-Speed 0.13μm SiGe:C BiCMOS Technology

  • Author

    Choi, L.J. ; Kunnen, E. ; Van Huylenbroeck, Stefaan ; Piontek, A. ; Sibaja-Hemandez, A. ; Vleugels, F. ; Dupont, T. ; Leray, P. ; Devriendt, K. ; Shi, X.P. ; Loo, R. ; Vanhaelemeersch, S. ; Decoutere, S.

  • Author_Institution
    IMEC Interuniv. Microelectron. Center, Leuven
  • fYear
    2006
  • fDate
    24-26 April 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A novel scheme for deep trench isolation is presented, which uses an airgap as insulator. When incorporated in our 0.13mum SiGe:C BiCMOS technology, the peripheral substrate parasitics decrease with an order of magnitude to a record value of 0.02fF/mum, which significantly improves the device RF performance
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; air gaps; high-speed integrated circuits; isolation technology; 0.13 micron; BiCMOS technology; SiGe:C; airgaps; deep trench isolation; peripheral substrate parasitics; BiCMOS integrated circuits; Capacitance; Diffusion tensor imaging; Filling; Isolation technology; Microelectronics; Plugs; Radio frequency; Substrates; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2006 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0181-4
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2006.251079
  • Filename
    4016615
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2722495