Title :
Overview and Future Challenge of Floating Body Cell (FBC) Technology for Embedded Applications
Author :
Nitayama, Akihiro ; Ohsawa, Takashi ; Hamamoto, Takeshi
Author_Institution :
SoC R&D Center, Toshiba Corp., Yokohama
Abstract :
A one-transistor memory cell on silicon-on-insulator, called floating body cell (FBC), has been developed for high density embedded DRAM applications. The functionality of a 128Mb FBC DRAM using fully compatible 90nm CMOS technology has been successfully demonstrated. The memory cell design, such as fully-depleted (FD) operation with substrate-bias, and the process integration, such as well and Cu wiring, are reviewed. The scalability and future challenge of FBC technology are discussed as well
Keywords :
CMOS memory circuits; DRAM chips; integrated circuit design; silicon-on-insulator; 128 Mbit; 90 nm; CMOS technology; Cu; DRAM cell; floating body cell; fully-depleted operation; memory cell design; one-transistor memory cell; process integration; silicon-on-insulator; CMOS process; CMOS technology; Circuits; Fabrication; Immune system; Random access memory; Scalability; Silicon on insulator technology; Threshold voltage; Wiring;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
1-4244-0181-4
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2006.251082
