DocumentCode
2722539
Title
Fabrication of asymmetric triply coupled quantum well for high-performance optical modulators/switches
Author
Endo, Wataru ; Matsumoto, Hiroyuki ; Shirakawa, Ryoya ; Arakawa, Taro ; Tada, Kunio
Author_Institution
Grad. Sch. of Eng., Yokohama Nat. Univ., Yokohama
fYear
2008
fDate
7-10 July 2008
Firstpage
1
Lastpage
2
Abstract
An asymmetric triply coupled quantum well (ATCQW) is proposed and analyzed as a novel structure for producing giant ER sensitivity dn/dF. The GaAs/AlGaAs ATCQW was grown by MBE and its photo-absorption current was measured.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical fabrication; optical modulation; optical switches; quantum well devices; semiconductor quantum wells; GaAs-AlGaAs; MBE; asymmetric triply coupled quantum well; giant ER sensitivity; optical modulators; optical switches; photo-absorption current; Absorption; Charge carrier processes; Current measurement; Erbium; Gallium arsenide; Molecular beam epitaxial growth; Optical coupling; Optical device fabrication; Optical modulation; Optical switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the
Conference_Location
Sydney
Print_ISBN
978-0-85825-807-5
Electronic_ISBN
978-0-85825-807-5
Type
conf
DOI
10.1109/OECCACOFT.2008.4610386
Filename
4610386
Link To Document