• DocumentCode
    2722541
  • Title

    Stack DRAM Technologies for the Future

  • Author

    Park, Donggun ; Lee, Wonshick ; Ryu, Byung-Il

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co., Gyeonggi-Do
  • fYear
    2006
  • fDate
    24-26 April 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Newly developed stack DRAM technologies such as RCAT, FinFET, MIM capacitor, improved support transistors, and litho-friendly patterning are introduced. Using these technologies, we expect that the scaling of DRAM can be continuously achieved until 2010
  • Keywords
    DRAM chips; MIM devices; MOSFET; capacitors; lithography; FinFET; MIM capacitor; RCAT; litho-friendly patterning; stack DRAM technologies; support transistors; Capacitance; Contact resistance; FinFETs; High K dielectric materials; Immune system; MIM capacitors; MOSFETs; Random access memory; Threshold voltage; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 2006 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    1-4244-0181-4
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2006.251083
  • Filename
    4016619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2722541